Hostname: page-component-745bb68f8f-kw2vx Total loading time: 0 Render date: 2025-02-08T02:50:37.988Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of High-Resistivity Wurtzite and Zincblende Structure Single Crystal Gan by Reactive-Ion Molecular Beam Epitaxy

Published online by Cambridge University Press:  26 February 2011

R. C. Powell ,
G. A. Tomasch ,
Y.-W. Kim ,
J. A. Thornton  and
J. E. Greene
R. C. Powell
Affiliation:
Department of Materials Science, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 W. Springfield Av., Urbana, IL 61801.
G. A. Tomasch
Affiliation:
Department of Materials Science, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 W. Springfield Av., Urbana, IL 61801.
Y.-W. Kim
Affiliation:
Department of Materials Science, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 W. Springfield Av., Urbana, IL 61801.
J. A. Thornton
Affiliation:
Department of Materials Science, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 W. Springfield Av., Urbana, IL 61801.
J. E. Greene
Affiliation:
Department of Materials Science, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 W. Springfield Av., Urbana, IL 61801.
Get access

Abstract

Epitaxial GaN films have been grown at temperatures between 600 and 900 °C by reactive-ion molecular-beam epitaxy. Ga was provided by evaporation from an effusion cell while nitrogen was supplied from a low-energy, single-grid, ion source. The average energy per accelerated N incident at the growing film surface was ≈ 19 eV. Films deposited on Al2O3(0112) and MgO(100)l×l substrates had wurtzite (a-GaN) and metastable zincblende (α-GaN) structures, respectively. The lattice constants were a = 0.3192 nm and c = 0.5196 nm for α;-GaN and a = 0.4531 nm for β -GaN. The room-temperature optical bandgap Eg of zincblende GaN, 3.30 eV, was found to be 0.11 eV lower than that of the hexagonal polymorph α-GaN. All films were n-type with electron carrier concentrations which decreased from 4×1018 to 8×1013 cm−3 with increasing incident N2+/Ga flux ratios between 0.63 and 3.9. Resistivities <106Ω-cm were achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 525
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Maruska, H. P. and Tietjen, J. J., Appl. Phys. Lett. 15, 327 (1969).Google Scholar
[2] I.Pankove, J. in Novel Refractory Semiconductors, edited by Emin, D., Aselage, T. L., and Wood, C. (Mater. Res. Soc. Proc. 97, Anaheim, CA 1987) pp. 409–413 Google Scholar
[3] Das, K. and Ferry, D. K., Solid State Elec. 19, 851 (1976).Google Scholar
[4] Bloom, S., Harbeke, G., Meier, E. and Ortenburger, I.B., Phys. Stat. Sol. B 66, 161 (1974).Google Scholar
[5] Paisley, M. J., Sitar, Z., Posthill, J. B., and Davis, R.F., J. Vac. Sci. Tech. A7, 701 (1989).Google Scholar
[6] Lagerstedt, O. and Monemar, B., J. Appl. Phys. 45, 2266 (1974).Google Scholar
[7] Amano, H., Sawaki, N., Akasaki, I., and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).Google Scholar
[8] Manasevit, H. M., Erdmann, F.M. and Simpson, W.I., J. Electrochem. Soc. 118, 1864 (1971).Google Scholar
[9] Ilegems, M., J. Cryst. Growth 13/14, 360 (1972).Google Scholar
[10] Yoshida, S., Misawa, S., and Gonda, S., Appl. Phys. Lett. 42, 427 (1983) and J. Vac. Sci. Tech. B1, 250 (1983)Google Scholar
[11] Hovel, H. J. and Cuomo, J.J., Appl. Phys. Lett. 20, 71 (1972).Google Scholar
[12] Kosicki, B. B. and Kahng, D., J. Vac. Sci. Tech. 6, 593 (1969).Google Scholar
[13] Gotoh, H., Suga, T., Suzuki, H. and Kimata, M., Jap. J. Appl. Phys. 20, L545 (1981).Google Scholar
[14] Kubota, K., Kobayshi, Y., and Fujimoto, K., J. Appl. Phys. 66, 2984 (1989).Google Scholar
[15] Kaufman, H. R., Cuomo, J.J., and Harper, J.M.E., J. Vac. Sci. Tech. 21, 725 (1982).Google Scholar
[16] Myers, A. M., Ruzic, D. N., Powell, R. C., Maley, N., Pratt, D. W., Greene, J. E., and Abelson, J. R., J. Vac. Sci. Tech., in press.Google Scholar
[17] Winters, H. F., J. Chem. Phys. 44, 1472 (1966).Google Scholar
[18] Yim, W. M. and Paff, R.J., J. Appl. Phys. 45, 1456 (1974).Google Scholar
[19] Inorganic Index to Powder Diffraction File, Joint Committee on Powder Diffraction Standards, Pennsylvania (1972).Google Scholar
[20] van der Pauw, L. J., Philips Res. Reports 13, 1 (1958).Google Scholar
[21] Sasaki, T. and Zembutsu, S., J. Appl. Phys. 61, 2533 (1987).Google Scholar
[22] Lorenz, M. R. in Physics and Chemistry of II-VI Compounds, edited by Aven, M. and Prener, J. S. (North-Holland Publishers, Amsterdam, 1967) pp. 74–86.Google Scholar
[23] Goldsmith, A., Waterman, T.E., and Hirschhorn, H.J., Handbook of Thermophysical Properties of Solid Materials Vol. III, (MacMillan, New York, 1961), p. 167.Google Scholar