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The Growth of GaN Films by Migration-Enhanced Epitaxy

Published online by Cambridge University Press:  10 February 2011

S. E. Hooper ,
C. T. Foxon ,
T. S. Cheng ,
N. J. Jeffs ,
G. B. Ren ,
D. E. Lacklison ,
J. W. Orton  and
G. Duggan
S. E. Hooper
Affiliation:
Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford OX4 4GA, United Kingdom
C. T. Foxon
Affiliation:
Department of Physics, University of Nottingham, Nottingham NG7 2RD, United Kingdom
T. S. Cheng
Affiliation:
Department of Physics, University of Nottingham, Nottingham NG7 2RD, United Kingdom
N. J. Jeffs
Affiliation:
Department of Physics, University of Nottingham, Nottingham NG7 2RD, United Kingdom
G. B. Ren
Affiliation:
Department of Electrical and Electronic engineering, University of Nottingham, Nottingham NG7 2RD, United Kingdom
D. E. Lacklison
Affiliation:
Department of Electrical and Electronic engineering, University of Nottingham, Nottingham NG7 2RD, United Kingdom
J. W. Orton
Affiliation:
Department of Electrical and Electronic engineering, University of Nottingham, Nottingham NG7 2RD, United Kingdom
G. Duggan
Affiliation:
Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford OX4 4GA, United Kingdom
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Abstract

Gallium Nitride epitaxial films were grown by migration enhanced epitaxy directly on sapphire (0001) without using any pre-growth substrate nitridation or low temperature buffer layers. In comparison with our material grown directly on sapphire by conventional molecular beam epitaxy, a significant improvement in the surface morphology and layer properties, measured by reflection high energy electron diffraction, X-ray diffraction, scanning electron microscopy, room temperature photoluminescence and the Hall effect, was observed for material grown by migration enhanced epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 325
Copyright
Copyright © Materials Research Society 1997

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References

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