Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-02-04T16:54:37.044Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth Mechanism of Microcrystalline Silicon Deposited by ECRCVD

Published online by Cambridge University Press:  15 February 2011

I. Beckers ,
E. Conrad ,
P. Müller ,
N. H. Nickel ,
I. Sieber  and
W. Fuhs
I. Beckers
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, F. R., Germany
E. Conrad
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, F. R., Germany
P. Müller
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, F. R., Germany
N. H. Nickel
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, F. R., Germany
I. Sieber
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, F. R., Germany
W. Fuhs
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, F. R., Germany
Get access

Abstract

Microcrystalline silicon (μc-Si) films were prepared by electron cyclotron resonance assisted chemical vapor deposition (ECRCVD) using helium, argon and hydrogen dilution. The crystalline fraction was estimated from Raman backscattering spectra and scanning electron-microscopy (SEM) was used to obtain information on roughness and homogeneity of the films. For hydrogen dilution the highest crystallinity (Xc = 85 %) occurs at a ratio of ΔH = [H2]/([H2]+[SiH4])= 0.98. At the same time the deposition rate decreases continuously with increasing H2 dilution. These results are consistent with the idea that H etching promotes the growth of μc-Si. At ΔH > 0.98 a Xc decreases due to a H mediated transition of small crystallites into amorphous tissue. The implications of these results for the growth mechanisms are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 773
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Matsuda, A., J. Non-Cryst. Solids. 59&60, 767 (1983).Google Scholar
2.Tsai, C. C., in Amorphous Silicon and Related Materials, ed. Fritzsche, H. (Advances in Disordered Semiconductors 1, Chicago, 1988), 123–147.Google Scholar
3.Gallagher, A., in Material Issues in Amorphous-Semiconductor Technology, edited by Adler, D., Hamakawa, Y., and Madan, A. (Mater. Res. Soc. Proc. 70, Pittsburgh, PA 1986), 3.Google Scholar
4.Spear, W. E., and LeComber, P. G., in The Physics of Hydrogenated Silicon I. edited by Joannopoulos, J. D., and Lucovsky, G., New York, 1984, 63.Google Scholar
5.Bustarret, E., Hachida, M.A., Appl. Phys. Lett. 40, 1675 (1988).Google Scholar
6.Xia, H., He, Y. L., Wang, L. C., Zhang, W., Liu, X. N., Zhang, X. K., Feng, D., J. Appl. Phys. 78, 6705 (1995).Google Scholar
7.Hapke, P., Dissertation, 15–20 (1995).Google Scholar
8.Kobliska, R., Solin, S., Phys. Rev. B. 8, 3799 (1973).Google Scholar
9.Wang, K. C., Hwang, H. L., Leong, P. T., Yew, T. R., J. Appl. Phys. 77, 6542 (1995).Google Scholar
10.Zhang, M., Nakayama, Y., Solid State Phenomena 44–46, 135–180 (1995).Google Scholar
11.Das, D., Solid State Phenomena 44–46, 227–258 (1995).Google Scholar
12.Street, R.A., Phys. Rev. B 43, 2454 (1991).Google Scholar
13.Nickel, N. H., unpublishedGoogle Scholar
14.Nickel, N. H., Jackson, W. B., Phys. Rev. B 51, 4872 (1995).Google Scholar