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Growth Induced Alignment Of The First Neighbor Shell Of CAs In AlxGa1−xAs

Published online by Cambridge University Press:  15 February 2011

J. -F. Zheng ,
Michael Stavola ,
C. R. Abernathy  and
S. J. Pearton
J. -F. Zheng
Affiliation:
Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, USA
Michael Stavola
Affiliation:
Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, USA
C. R. Abernathy
Affiliation:
Department of Materials Science, University of Florida, Gainesville, Florida, 32611, USA
S. J. Pearton
Affiliation:
Department of Materials Science, University of Florida, Gainesville, Florida, 32611, USA
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Abstract

We have discovered a growth-induced alignment of the Al and Ga first neighbors of CAs, acceptors in AlxGa1−xAs grown by metalorganic molecular beam epitaxy. This growth induced alignment has been detected from the polarization dependence of the C atom's vibrational absorption bands that the alignment gives rise to. The alignment of the first neighbor shell of CAs also gives rise to aligned CAs-H complexes when the C is passivated by H. This leads to polarized H-stretching absorption bands which have also been observed. The growth-induced alignment provides information which helps us to assign the complicated CAsvib rational spectrum observed in the AlxGa1−xAs alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 387
Copyright
Copyright © Materials Research Society 1997

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