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Growth Conditions of Erbium-Oxygen-Doped Silicon Grown by MBE

Published online by Cambridge University Press:  10 February 2011

J. Stimmer ,
A. Reittinger ,
G. Abstreiter ,
H. Holzbrecher  and
Ch. Buchal
J. Stimmer
Affiliation:
Walter Schottky Institut, Techn. Univ. Munich, D-85748 Garching, Germany, jstimmer @physik.tu-muenchen.de
A. Reittinger
Affiliation:
Walter Schottky Institut, Techn. Univ. Munich, D-85748 Garching, Germany, jstimmer @physik.tu-muenchen.de
G. Abstreiter
Affiliation:
Walter Schottky Institut, Techn. Univ. Munich, D-85748 Garching, Germany, jstimmer @physik.tu-muenchen.de
H. Holzbrecher
Affiliation:
ZHF, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Ch. Buchal
Affiliation:
ISI 2, Forschungszentrum Jülich G3mbH, D-52425 Jülich, Germany
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Abstract

We report on a systematic study of the growth parameters of erbium-oxygen-doped silicon grown by molecular beam epitaxy. The surface quality of the grown layers was measured in situ by RHEED. The samples were characterized by photoluminescence measurements and SIMS. An Er-O-doped Si light emitting diode grown with the optimized parameters is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 15
Copyright
Copyright © Materials Research Society 1996

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