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Growth and Characterization of InP/GaAs on Soi by Mocvd

Published online by Cambridge University Press:  28 February 2011

N.H. Karam ,
V. Haven ,
S.M. Vernon ,
F. Namavar ,
N. El-Masry ,
N. Haegel  and
M.M. Al-Jassim
N.H. Karam
Affiliation:
Spire Corporation, Bedford, MA 01730
V. Haven
Affiliation:
Spire Corporation, Bedford, MA 01730
S.M. Vernon
Affiliation:
Spire Corporation, Bedford, MA 01730
F. Namavar
Affiliation:
Spire Corporation, Bedford, MA 01730
N. El-Masry
Affiliation:
North Carolina State University, Raleigh, NC 27695
N. Haegel
Affiliation:
University of California, Los Angeles, CA 90024
M.M. Al-Jassim
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
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Abstract

Epitaxial InP films have been successfully deposited on GaAs coated silicon wafers with a buried oxide for the first time by MOCVD. The SOI wafers were prepared using the Separation by IMplantation of Oxygen (SIMOX) process. The quality of InP on SIMOX is comparable to the best of InP on Si deposited in the same reactor. Preliminary results on defect reduction techniques such as Thermal Cycle Growth (TCG) show an order of magnitude increase in the photoluminescence intensity and a factor of five reduction in the defect density. TCG has been found more effective than Thermal Cycle Annealing (TCA) in improving the crystalline perfection and optical properties of the deposited films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 247
Copyright
Copyright © Materials Research Society 1990

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References

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