Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-02-04T13:54:13.198Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterization of Epitaxial Insulating CaF2ON Si

Published online by Cambridge University Press:  28 February 2011

Julia M. Phillips
Julia M. Phillips*
Affiliation:
At&t Bell Laboratories Murray Hill, NJ 07974
Get access

Abstract

The growth of epitaxial insulators on semiconductors in general and on Si in particular is an area of research which has developed quickly over the last five years. Most of thecurrent interest is in films of materials which can be grown by molecular beam epitaxy. A significant fraction of all of the work in this area has concerned the CaF2/Si system. This review will cover that body of work.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 97
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Phillips, J. M. and Gibson, J. M., Mat. Res Soc. Symp. Proc. 25, 381, (1984) and references therein.CrossRefGoogle Scholar
2. Phillips, J. M. and Augustyniak, W. M., Appl. Phys. Lett. 48, 463 (1986).CrossRefGoogle Scholar
3. Mankiewich, P. M., Craighead, H. G., Harrison, T R., and Dayem, A. H., Appl. Phys. Lett. 44, 468 (1984).CrossRefGoogle Scholar
4. Salisbury, I. G., Timsit, R S., Berger, S. D., and Humphreys, C. J., Appl Phys. Lett. 45, 1289 (1984), S. Zogg, H. and Huppi, M., Appl. Phys. Lett. 47, 133 (1985).CrossRefGoogle Scholar
6. Farrow, R. F. C., Sinharoy, S., Hoffman, R. A., Rieger, J. H., Takei, W. J., Greggi, J. C. Jr, Wood, S, and Temofonte, T A., Mat. Res. Soc. Symp. Proc. 87, 181 (1985).Google Scholar
7.For further information on the alkaline earth fluorides see Hayes, W., Ed., Crystals with the Fluorite Structure, Clarendon Press, Oxford (1974)Google Scholar
8. Phillips, J. M., Mat. Res. Soc. Symp. Proc. 87, 143 (1985), and references therein.Google Scholar
9. Schowalter, L J., Fathauer, R. W., Goehner, R. P., Turner, L. G., DeBlois, R. W., Hashimoto, S., Peng, J.-L., Gibson, W. M, and Krusius, J. P., J. Appl. Phys. 58, 302 (1985).CrossRefGoogle Scholar
10. Smith, T. P. III, Phillips, J. M., Augustyniak, W. M., and Stiles, P. J., Appl. Phys. Lett. 45, 907 (1984)CrossRefGoogle Scholar
11. Asano, T. and Ishiwara, H., Thin Solid Films 98, 143 (1982).CrossRefGoogle Scholar
12. Phillips, J. M., Manger, M. L, Pfeiffer, L, Joy, D. C., Smith, T. P. III, Augustyniak, W. M., and West, K. W., Mat. Res- Soc. Symp. Proc., in press.Google Scholar
13. Smith, T. P. III, Phillips, J. M., People, R, Gibson, J. M., Pfeiffer, L, and Stiles, P. J., Mat. Res. Soc. Symp. Proc., in press.Google Scholar
14. Pfeiffer, L., Phillips, J. M., Smith, T. P., AugustyniakW. M., and WestK. W., Mat. Res. Soc. Symp. Proc. 85, 401 (1985).Google Scholar
15. Phillips, J. M., Pfeiffer, L., Joy, D. C., Smith, T. P. III, Gibson, J. M., Augustyniak, W. M., and West, K. W., J. Electrochem. Soc 188, 224 (1986).CrossRefGoogle Scholar
16. Asano, T, Ishiwara, H., and Kaifu, N., Jpn. J. Appl. Phys. 22, 1476 (1983).Google Scholar
17. Ponce, F. A., Mat. Res. Soc. Symp. Proc., in press.Google Scholar
18. Schowalter, L. J., Fathauer, R. W., and Krusius, J. P., Proc. 1st Intl. Symp. on Silicon Molecular Beam Epitaxy, Bean, J. C., Iyer, S. S., Kasper, E., and Shiraki, Y., Eds., The Electrochemical Society, Pennington, NJ, p. 311 (1985).Google Scholar
19. People, R., Smith, T. P. II, Phillips, J. M., Augustyniak, W. M., and Wecht, K. W., Mat. Res. Soc. Symp. Proc. 87, 169 (1985).Google Scholar
20. Schowalter, L. J., Fathauer, R. W., Turner, L. G., and Robertson, C. D., Mat. Res. Soc. Symp. Proc. 87, 151 (1985).Google Scholar
21. Smith, T. P. III, Ph.D. thesis, Brown University, Providence, RI (1985).Google Scholar
22. Asano, T., Kuriyama, Y., and Ishiwara, H., Electronics Lett. 21, 386 (1985).CrossRefGoogle Scholar
23. Smith, T.P.F III, Phillips, J. M., People, R., Gibson, J. M., and Stiles, P. J., Mat. Res. Soc. Syrp. Proc. 87, 163 (1985).Google Scholar
24. Pfeiffer, L., Phillips, J. M., Smith, T. P. II, Augustyniak, W. M., and West, K. W., Appl. Phys. Lett. 46, 947 (1985).CrossRefGoogle Scholar
25. Sasaki, M., Hirashita, N., Onoda, H., and Hagiwara, S., Appi. Phys. Lett. 46, 1056 (1985).CrossRefGoogle Scholar
26. Fathauer, R. W., Schowalter, L. J., Lewis, N., and Hall, E. L., Proc. 1st Intl. Symp. on Silicon Molecular Beam Epitaxy, The Electrochemical Society, Pennington, NJ, p. 277 (1985).Google Scholar
27. Ishiwara, H. and Asano, T., Appl. Phys. Lett. 40, 66 (1982).CrossRefGoogle Scholar
28. Ishiwara, H. and Asano, T., Jpn. J. Appl. Phys. 22, Suppl. p. 201 (1983).CrossRefGoogle Scholar