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Growth and Characterization of Ba0.5Sr0.5TiO3 Thin Films on Si (100) By 90° Off-Axis Sputtering

Published online by Cambridge University Press:  15 February 2011

S. Y. Hou ,
J. Kwo ,
R. K. Watts ,
D. J. Werder ,
J. Shmulovich  and
H. M. O'Bryan
S. Y. Hou
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. Kwo
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. K. Watts
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. J. Werder
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. Shmulovich
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
H. M. O'Bryan
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We have studied BaxSr1-xTiO3 (BST) thin films (x=0.5) grown on Si (100) with and without a Pt/Ta barrier layer using 90° off-axis RF sputtering. The growth conditions were optimized according to film crystallinity, stoichiometry, and dielectric properties. Polycrystalline BST films with strong (100) texture were obtained via growth on Si (100). The measured dielectric constant from these films was low, presumably because of the parasitic effect of native oxide at BST/Si interface as revealed by TEM. On the other hand, BST films grown on Si with Pt/Ta barrier layers have crystallinity inferior to that on bare Si as determined by X-ray diffraction. Nevertheless, the best BST films on Pt/Ta layers still have good dielectric properties with dielectric constant exceeding 330, leakage current density < 1×10−6 A/cm2 (±1 V), and loss tangent 0.05 at 1 MHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 457
Copyright
Copyright © Materials Research Society 1994

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References

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