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Grazing-angle Incidence X-ray Diffraction by the Si1-α(x)-β(x) Geβ(x) Cβ(x) /Si Heterojunction where the Germanium and the Carbon Concentrations are Periodically Varying along the Flat Layer Surface

Published online by Cambridge University Press:  01 February 2011

Hayk H. Bezirganyan Jr ,
Siranush E. Bezirganyan ,
Hakob P. Bezirganyan  and
Petros H. Bezirganyan Jr
Hayk H. Bezirganyan Jr
Affiliation:
Dept. of Informatics and Applied Mathematics, Yerevan State University, #1, Alex Manoogian Street, Yerevan 375025, Republic of Armenia.
Siranush E. Bezirganyan
Affiliation:
Dept. of Physics, Yerevan State University Armenia, #1, Alex Manoogian Street, Yerevan 375025, Republic of Armenia.
Hakob P. Bezirganyan
Affiliation:
Dept. of Physics, Yerevan State University Armenia, #1, Alex Manoogian Street, Yerevan 375025, Republic of Armenia.
Petros H. Bezirganyan Jr
Affiliation:
Dept. of Computer Science, State Engineering University of Armenia, #105, Terian Street, Yerevan 375009, Republic of Armenia.
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Abstract

Presented theoretical paper concerns the investigation of SiGeC/Si heterojunction by the Grazing-angle Incidence X-ray Diffraction (GIXD) method. We consider a possibility in principal of the GIXD by the specific long-range harmonic variations of the germanium and carbon compositions in the thin SiGeC layer. Evaluation of the theoretically calculated coherent part of x-radiation scattered by the SiGeC layer points the way to the experimental direct investigations of the long-period structured intermediate transformation states of SiGeC layer that emerge owing to inhomogeneity of the strain field along the heterojunction surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B4.31
Copyright
Copyright © Materials Research Society 2002

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