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Grain Boundary Sliding in Thin Substrate-Bonded al Films

Published online by Cambridge University Press:  21 February 2011

M. Prieler ,
H.G. Bohn ,
W. Schilling  and
H. Trinkaus
M. Prieler
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, Postfach 1913, D-52425 Jülich, Germany
H.G. Bohn
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, Postfach 1913, D-52425 Jülich, Germany
W. Schilling
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, Postfach 1913, D-52425 Jülich, Germany
H. Trinkaus
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, Postfach 1913, D-52425 Jülich, Germany
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Abstract

A systematic investigation of the anelastic relaxation of thin Al films on Si substrates has been carried out. It was found that both the relaxation in bulk and thin film material can be explained by a model involving glide of grain boundaries (GBs). The mass transport necessary for the glide occurs via GB diffusion in the thin films and via lattice diffusion in the bulk material the different behavior being due to the more of two orders of magnitude smaller grains in the films. Internal friction thus provides a technique to measure diffusional parameters of GB diffusion in thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 237
Copyright
Copyright © Materials Research Society 1993

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