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Grain Boundary Phase Analysis of Silicon Nitride by a NewlyDeveloped 300kv Field-Emission Electron Microscope

Published online by Cambridge University Press:  21 February 2011

Y. Bando ,
H. Suematsu  and
M. Mitomo
Y. Bando
Affiliation:
National Institute for Research in Inorganic Materials, Namiki, Tsukuba, Ibaraki, 305 Japan
H. Suematsu
Affiliation:
National Institute for Research in Inorganic Materials, Namiki, Tsukuba, Ibaraki, 305 Japan
M. Mitomo
Affiliation:
National Institute for Research in Inorganic Materials, Namiki, Tsukuba, Ibaraki, 305 Japan
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Abstract

The grain boundary phase of silicon nitride containing additives Y2O3 and Nd2O3 has beenstudied by means of a newly developed 300kV field emission ATEM. Thecomposition of the two-grain boundary phase of about 1 nm thick issuccessfully determined. It is then found that the compositions among thegrain boundaries are not the same and the additives of Y2O3-Nd2O3 are poor in thetwo-grain boundary, while they are rich in the triple points.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 346: Symposium N – Better Ceramics Through Chemistry VI , 1994 , 733
Copyright
Copyright © Materials Research Society 1998

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References

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