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Generation and Suppression of Stacking Faults in Gap Layers Grown on Si(100) Substrates by Molecular Beam Epitaxy and Migration Enhanced Epitaxy

Published online by Cambridge University Press:  10 February 2011

Y. Takagi ,
H. Yonezu ,
K. Samonji ,
T. Tsuji  and
N. Ohshima
Y. Takagi
Affiliation:
Department of Electrical and Electronic Engineering Toyohashi University of Technology 1-1 Tempaku-cho, Toyohashi, Aichi 441, Japan
H. Yonezu
Affiliation:
Department of Electrical and Electronic Engineering Toyohashi University of Technology 1-1 Tempaku-cho, Toyohashi, Aichi 441, Japan
K. Samonji
Affiliation:
Department of Electrical and Electronic Engineering Toyohashi University of Technology 1-1 Tempaku-cho, Toyohashi, Aichi 441, Japan
T. Tsuji
Affiliation:
Department of Electrical and Electronic Engineering Toyohashi University of Technology 1-1 Tempaku-cho, Toyohashi, Aichi 441, Japan
N. Ohshima
Affiliation:
Department of Electrical and Electronic Engineering Toyohashi University of Technology 1-1 Tempaku-cho, Toyohashi, Aichi 441, Japan
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Abstract

We have investigated the generation process of crystalline defects in GaP layers grown on Si substrates (GaP/Si) by molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE). Transmission electron microscopy observations revealed that a regular network of misfit dislocations was generated in GaP/Si by MEE. On the other hand, threading dislocations as well as interfacial misfit dislocations were observed in GaP/Si by MBE. Moreover, stacking faults were generated in high density at the hetero-interface of GaP/Si by MBE. The density of stacking faults was drastically reduced by MEE.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 157
Copyright
Copyright © Materials Research Society 1997

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