Hostname: page-component-54dcc4c588-sdd8f Total loading time: 0 Render date: 2025-10-01T02:34:17.287Z Has data issue: false hasContentIssue false
  • English
  • Français

A General Analysis of Steady State Photocarrier Grating Technique for the Determination of Ambipolar Diffusion Length

Published online by Cambridge University Press:  25 February 2011

Yuan-Min Li
Yuan-Min Li*
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
Get access

Abstract

A general photoconductivity formula is derived for the case of a semiconductor steady state photocarrier grating (SSPG)1. It is shown that, under the condition of weak applied electric field, the ambipolar diffusion length can be determined by the SSPG technique1without the lifetime-regime restriction2,3 if the lifetime of photocarriers is known. The general formula presented here is reduced to the simple lifetime-regime formula1–3 under the condition of fast dielectric relaxation.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 299
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

Ritter, D., Weiser, K., and Zeldov, E., J. Appl. Phys. 62, 4563 (1987).Google Scholar
2. Ritter, D., Zeldov, E., and Weiser, K., Phys. Rev. B 38, 8296 (1988).Google Scholar
3. Weiser, K. and Ritter, D., in Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific, New Jersey, 1989), p. 871.Google Scholar
4. Due to space limitation, the algebraic details will be published elsewhere.Google Scholar
5. Smith, R.A., Semiconductors (2nd ed.), Cambridge University Press, New York, 1978.Google Scholar