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Gate-Prior-To-Isolation Cmos-Technology with Through-The-Gate-Implanted Ultra-Thin Gate Oxides

Published online by Cambridge University Press:  10 February 2011

Udo Schwalke ,
Christian Gruensfelder ,
Alexander Gschwandtner ,
Gudrun Innertsberger  and
Martin Kerber
Udo Schwalke
Affiliation:
Infineon Technologies AG, Otto-Hahn-Ring 6, 81730 Munich, Germany
Christian Gruensfelder
Affiliation:
Infineon Technologies AG, Otto-Hahn-Ring 6, 81730 Munich, Germany
Alexander Gschwandtner
Affiliation:
Infineon Technologies AG, Otto-Hahn-Ring 6, 81730 Munich, Germany
Gudrun Innertsberger
Affiliation:
Infineon Technologies AG, Otto-Hahn-Ring 6, 81730 Munich, Germany
Martin Kerber
Affiliation:
Infineon Technologies AG, Otto-Hahn-Ring 6, 81730 Munich, Germany
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Abstract

We have realized direct-tunneling gate oxide (1.6nm) NMOS and PMOS transistors by means of through-the-gate-implantation in a comer parasitics-free shallow-trench-isolation CMOS technology. In order to take full advantage of in-situ cluster-tool processing and to preserve initial wafer-surface quality, the essential part of the MOS gate is fabricated prior to device isolation and through-the-gate-implantation is utilized for well- and channel doping. In addition, a fully-reinforced-gate-oxide-perimeter is provided and trench comer parasitics are eliminated by the advanced process architecture EXTIGATE without increasing process complexity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 597
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

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