Published online by Cambridge University Press: 22 February 2011
Gas phase and surface decomposition reactions of a novel arsenic precursor tris- (dimethylamino) arsenic (DMAAs) have been studied. Optical fiber-based Fourier transform infrared spectroscopy was used to monitor, in situ, the gas-phase pyrolysis of DMAAs. Homolysis of the arsenic-nitrogen bond with formation of dimethylamine radicals was identified as the key gas-phase reaction pathway. Formation of methylmethyleneimine from reactions with the decomposition products was directly observed. Surface decomposition of DMAAs on GaAs(100) was investigated by low energy electron diffraction and temperature-programmed reaction under ultra-high vacuum conditions. DMAAs adsorbed onto GaAs(100)-(4x6) was found to decompose with 100% efficiency and two surface reaction pathways were identified. The first reaction channel was homolysis of the arsenic-nitrogen bond with formation of dimethylamine radicals, whereas the second pathway involved a β-hydrogen transfer.