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Gas Phase and Surface Kinetic Processes in Hot-Wire Chemical Vapor Deposition

Published online by Cambridge University Press:  17 March 2011

J. K. Holt ,
M. Swiatek ,
D. G. Goodwin  and
Harry A. Atwater
J. K. Holt
Affiliation:
Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena, CA 91125, U.S.A.
M. Swiatek
Affiliation:
Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena, CA 91125, U.S.A.
D. G. Goodwin
Affiliation:
Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena, CA 91125, U.S.A.
Harry A. Atwater
Affiliation:
Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena, CA 91125, U.S.A.
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Abstract

One- and two-dimensional numerical simulations have been used to determine the parameters critical to high rate growth of high quality polycrystalline silicon via hot-wire chemical vapor deposition at silane partial pressures of 1-70 mTorr and a wire temperature of 2000°C. The Direct Simulation Monte Carlo method [1] was used, including gas-phase chemistry relevant for growth. Model predictions agree both qualitatively and quantitatively with experimental measurements.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A6.2
Copyright
Copyright © Materials Research Society 2000

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References

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