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Gan Nucleation Mechanism on A Surface Template of Oxidized AIAs

Published online by Cambridge University Press:  10 February 2011

Nobuhiko P. Kobayashia ,
Junko T. Kobayashia ,
Won-Jin Choib  and
P. Daniel Dapkusa
Nobuhiko P. Kobayashia
Affiliation:
Department of Materials Science and Engineering, Compound Semiconductor Laboratory, University of Southern California Los Angeles, California 90089-0241 Compound Semiconductor Laboratory, University of Southern California Los Angeles, California 90089-0241, nkobayas@scf.usc.edu
Junko T. Kobayashia
Affiliation:
Department of Materials Science and Engineering, Compound Semiconductor Laboratory, University of Southern California Los Angeles, California 90089-0241
Won-Jin Choib
Affiliation:
Department of Electrical Engineering/Electrophysics, Compound Semiconductor Laboratory, University of Southern California Los Angeles, California 90089-0241
P. Daniel Dapkusa
Affiliation:
Department of Materials Science and Engineering, Compound Semiconductor Laboratory, University of Southern California Los Angeles, California 90089-0241 Department of Electrical Engineering/Electrophysics, Compound Semiconductor Laboratory, University of Southern California Los Angeles, California 90089-0241
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Abstract

The surfaces of oxidized AlAs (AlOx) layers on Si(111) substrates are studied to understand the mechanism by which single crystal α-GaN can be grown by metalorganic chemical vapor deposition (MOCVD) on AlOx that appears to be an amorphous/fine-grain phase. Contact mode atomic force microscopy (C-AFM) and reflection high energy electron diffraction (RHEED) are used to study the AIOx surface on which a GaN nucleation layer (GaN-NL) is grown. The results indicate that an oriented α-Ga2O3 layer is formed on AlOx which is covered by a GaAs cap layer during oxidation. We infer that the α-Ga2O3 acts as a surface template that provides the order necessary for the subsequent growth of single crystal α-GaN. Characterization using RHEED and selective area electron diffraction (SAD) in cross sectional transmission microscopy (XTEM) reveals that the in-plane crystallographic orientation has a unique alignment between the various layers – GaN, α-Ga2O3 and the Si substrate. This in-plane alignment is understood by considering the atomic arrangement of each material on the plane perpendicular to [111]si at each interface. Moreover a comparison is made between α-GaN grown on α-Ga2O3 and on α-A12O3(0001) to characterize structural defects in α-GaN. The formation of specific structural defects, a large number of planar defects run perpendicular to [111]si in α-GaN/α-Ga2O3 is discussed in conjunction with GaN-NL on α-Ga2O3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 47
Copyright
Copyright © Materials Research Society 1998

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References

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