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GaAs MESFET's on Silicon Substrates for Digital IC Applications

Published online by Cambridge University Press:  25 February 2011

Hisashi Shichijo  and
Jhang Woo Lee
Hisashi Shichijo
Affiliation:
Texas Instruments Incorporated, P.O. Box 225936, Dallas, TX 75265
Jhang Woo Lee
Affiliation:
Texas Instruments Incorporated, P.O. Box 225936, Dallas, TX 75265
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Abstract

The characteristics of GaAs MESFETs in GaAs-on-Si have been studied in detail for digital IC applications. The device structure utilizes GaAs and AlGaAs undoped buffer layers grown on a 3 degrees off (100) silicon substrate by MBE. The threshold voltage of the MESFET is adjusted by recessing the gate.

The maximum observed transconductance of 135 mS/mm is comparable to what is expected from the bulk GaAs device with the same parameters. The device also shows good pinch-off characteristics. Both enhancement and depletion mode MESFETs have been fabricated.

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 173
Copyright
Copyright © Materials Research Society 1986

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References

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