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The Fracture Toughness of Polysilicon Microdevices

Published online by Cambridge University Press:  10 February 2011

R. Ballarini ,
R.L. Mullen ,
H. Kahn  and
A.H. Heuer
R. Ballarini
Affiliation:
Civil Engineering Department, Case Western Reserve University, Cleveland, OH 44106-7201
R.L. Mullen
Affiliation:
Civil Engineering Department, Case Western Reserve University, Cleveland, OH 44106-7201
H. Kahn
Affiliation:
Materials Science and Engineering Department, Case Western Reserve University, Cleveland, OH 44106-7204
A.H. Heuer
Affiliation:
Materials Science and Engineering Department, Case Western Reserve University, Cleveland, OH 44106-7204
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Abstract

The development of polysilicon fracture mechanics specimens with characteristic dimensions comparable to those of typical microelectromechanical systems (MEMS) devices is presented. The notched cantilever specimens are fully integrated with a simultaneously microfabricated electrostatic actuator, which allows on-chip testing of the specimens without the need of an external loading device, and without any possible influences from external sources. Under monotonic loading, the average maximum tensile stress (strength) and average nominal fracture toughness were measured as 4.2 GPa and 3.5 MPa-m½ for boron-doped specimens, and 5.0 GPa and 4.0 MPa-m½ for undoped specimens. An average modulus of rupture of 3.3 GPa and average nominal toughness of 2.7 MPa-m½ were measured for specimens cracked under cyclic resonance loading. The differences between the monotonic loading and cyclic loading data are attributed to fatigue initiation of a sharp crack from the 1 ýtm radius notch. The experimental data is consistent with a critical flaw size in the fabricated devices, a, that is related to the fracture toughness Klc by Klc/a1/2=4600 MPa.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 518: Symposium N – Microelectromechanical Structures for Materials Research , 1998 , 137
Copyright
Copyright © Materials Research Society 1998

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References

1 Brown, S. B., Arsdell, W.V. and Muhlstein, C.L., Proc. of the IEEE Int. Conference on Solid-State Sensors and Actuators, Transducers 97, (1997), 591.Google Scholar
2 Sharpe, W.N., Yuan, B. and Edwards, R.L., to be published in MRS Symposium Proceedings (Volume 505), Fall Meeting 1997.Google Scholar
3 Tsuchiya, T., Sakata, J. and Taga, Y., to be published in MRS Symposium Proceedings, Fall Meeting 1997 (Volume 505)Google Scholar
4 Ballarini, R., Mullen, R.L., Yin, Y., Kahn, H., Stemmer, S. and Heuer, A.H., J. Mater. Res. 12, 915 (1997).Google Scholar
5 Marxer, C., Grétillat, M.A., Rooij, N.F. de, Btittig, R., Anthamatten, O., Valk, B. and Vogel, P., Sensors and Actuators A 61, 449 (1997).Google Scholar
6 Houston, M.R., Maboudian, R. and Howe, R.T., Proc. Of the IEEE Int. Conference on Solid-State Sensors and Actuators, Transducers 95, 210 (1995).Google Scholar
7 Kahn, H., Stemmer, S., Nandakumar, K., Heuer, A.H., Mullen, R.L., Ballarini, R. and Huff, M.A., Proceedings of the IEEE Micro Electro Mechanical Systems Workshop, MEMS 96, 343 (1996)Google Scholar