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Formation of Polycrystalline Silicon Films Using Electrical-Current-Induced Joule Heating

Published online by Cambridge University Press:  17 March 2011

Nobuyuki Andoh ,
Hiroyuki Takahashi  and
Toshiyuki Sameshima
Nobuyuki Andoh
Affiliation:
Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, JAPAN
Hiroyuki Takahashi
Affiliation:
Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, JAPAN
Toshiyuki Sameshima
Affiliation:
Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, JAPAN
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Abstract

Electrical current induced joule heating method was applied to crystallization of 50 nm-thick amorphous silicon films formed on glass substrates. Voltages were applied to silicon films connected with a capacitance in parallel. Irradiation with 5 ns-pulsed-laser melted films partially and caused electrical current induced joule heating because of reduction of electrical resistance. Lateral grain growth with 12.6 µm was realized using the tapered-shaped-electrodes to apply voltages to silicon films with a capacitance of 0.33 µF. For 2.6×10 17 cm−3 phosphorus-doped films, analysis of temperature change in the electrical conductivity gave that defect states at grain boundaries was low of ∼1017 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A6.2
Copyright
Copyright © Materials Research Society 2001

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References

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