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The Formation of In-Rich Regions at the Perphery of the Inverted Hexahonal Pits of Ingan Thin-Films Grown by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  03 September 2012

P. Li ,
S. J. Chua ,
M. Hao ,
W. Wang ,
X. Zhang ,
T. Sugahara  and
S. Sakai
P. Li
Affiliation:
Center for Opto-electronics Dept. of Electrical EngineeringNational University of SingaporeSINGAPORE 119260
S. J. Chua
Affiliation:
Center for Opto-electronics Dept. of Electrical EngineeringNational University of SingaporeSINGAPORE 119260 Institute of Materials Research and Engineering, SINGAPORE
M. Hao
Affiliation:
Institute of Materials Research and Engineering, SINGAPORE
W. Wang
Affiliation:
Institute of Materials Research and Engineering, SINGAPORE
X. Zhang
Affiliation:
Center for Opto-electronics Dept. of Electrical EngineeringNational University of SingaporeSINGAPORE 119260
T. Sugahara
Affiliation:
Dept. of Electrical and Electronics Engineering, The University of Tokushima, 2-1 Minami-Josanjima 770-8506, Japan
S. Sakai
Affiliation:
Dept. of Electrical and Electronics Engineering, The University of Tokushima, 2-1 Minami-Josanjima 770-8506, Japan
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Abstract

InGaN thin films were grown by low-pressure metalorganic-vapor-phase-epitaxy (MOVPE) and characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). SEM images showed that InGaN samples have inverted hexagonal pits which are formed by the In segregation on the (1011) surfaces. Room temperature CL at the wavelengths corresponding to the GaN band edge, the In-poor and In-rich regions showed that the In–rich regions formed at the periphery of the hexagonal pits.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.31
Copyright
Copyright © Materials Research Society 1999

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