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The Formation of Highly Conductive Shallow Junction Layers in (100) Siliconl By Gallium Ion Implantation

Published online by Cambridge University Press:  28 February 2011

H.B. Harrison ,
Y.H. Li ,
G.A. Sai-Halasz  and
S. Iyer
H.B. Harrison
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Australia, 3000.
Y.H. Li
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Australia, 3000.
G.A. Sai-Halasz
Affiliation:
I.B.M., T.J. Watson Research Centre, Yorktown Heights, New York, U.S.A.
S. Iyer
Affiliation:
I.B.M., T.J. Watson Research Centre, Yorktown Heights, New York, U.S.A.
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Abstract

This paper presents the results obtained from a comparative study of ion implanted Gallium (Ga) into (100), n type Silicon. A comparison is made between long time (≥ 30 mins) furnace annealed and Rapid Thermally Processed (RTP), 100keV implants of 1 and 3×10l5/cm2 doses of Ga. The results show that for RTP an extremely high substitutional concentration of Gallium, in excess of 3×1020/cm3 can be obtained with approximately 100% electrical activation, resulting in highly conductive very shallow p type layers.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 223
Copyright
Copyright © Materials Research Society 1986

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References

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