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Formation of Buried Oxide in Mev Oxygen Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

C.W. Nieh ,
F. Xiong ,
C. C. Ahn ,
Z. Zhou ,
D. N. Jamieson ,
T. Vreeland Jr. ,
B. Fultz  and
T. A. Tombrello
C.W. Nieh
Affiliation:
Materials Research Group California Institute of Technology, Pasadena, CA 91125
F. Xiong
Affiliation:
Materials Research Group California Institute of Technology, Pasadena, CA 91125
C. C. Ahn
Affiliation:
Materials Research Group California Institute of Technology, Pasadena, CA 91125
Z. Zhou
Affiliation:
Materials Research Group California Institute of Technology, Pasadena, CA 91125
D. N. Jamieson
Affiliation:
Materials Research Group California Institute of Technology, Pasadena, CA 91125
T. Vreeland Jr.
Affiliation:
Materials Research Group California Institute of Technology, Pasadena, CA 91125
B. Fultz
Affiliation:
Materials Research Group California Institute of Technology, Pasadena, CA 91125
T. A. Tombrello
Affiliation:
Materials Research Group California Institute of Technology, Pasadena, CA 91125
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Abstract

We have studied the formation of buried oxide in MeV oxygen implanted Si. A continuous oxide layer is formed in the samples implanted with 2x1018/cm2 oxygen and annealed at 1300° C. The microstructures are studied by cross-sectional transmission electron microscopy and high resolution electron microscopy. Chemical information was obtained by electron energy loss spectroscopy. The effects of implantation temperature are studied. Implantation at a low substrate temperature leads to a well-defined buried SiO2 layer, inhibits the formation of oxide precipitates in the silicon, and reduces silicon inclusions in the SiO2.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 73
Copyright
Copyright © Materials Research Society 1988

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