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Fluorinated Parylene as an Interlayer Dielectric for Thin Film MCM's

Published online by Cambridge University Press:  15 February 2011

S. Dabral ,
X. Zhang ,
X.M. Wu ,
G.-R. Yang ,
C.-I. Lang ,
H. Bakhrut ,
R. Olson ,
T.-M. Lu  and
J. F. McDonald
S. Dabral
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180.
X. Zhang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180.
X.M. Wu
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180.
G.-R. Yang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180.
C.-I. Lang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180.
H. Bakhrut
Affiliation:
Physics Department, Suny-Albany, Albany, NY 12222.
R. Olson
Affiliation:
Novatran Corp., Clear Lake, WI 54005.
T.-M. Lu
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180.
J. F. McDonald
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, 12180.
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Abstract

Aliphatic tetrafluoro-poly-p-xylylene (PA-f), has been evaluated as an interlayer dielectric and its properties reported. It has a lower dielectric constant (2.38) and higher thermal stability (480°C) than Parylene-n. The as-deposited films are of very low crystallinity. The crystallinity increases as the film is annealed. Thermo-Gravimetric Analysis has shown that these films loose weight at temperatures > 480°C. A shrinkage in the films of about 10% was observed when annealed in vacuum at a temperature of 425°C. The as-deposited films were measured to have low dielectric constant of 2.38 and a volume resistivity of 1.3×1016 ohm-cm. The refractive index in the optical wavelengths was measured to be 1.3 for as-deposited samples which increased with anneal temperatures. The stress levels observed are also lower (19 MPa) than PA-n (40 MPa) after annealing. Diffusion of Cu into PA-f is comparable with Cu diffusion in PMDA-ODA polyimide. Scanning Electron Microscopy of film cross-section shows microstructure change above temperatures of 350°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 264: Symposium G – Electronic Packaging Materials Science VI , 1992 , 83
Copyright
Copyright © Materials Research Society 1992

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References

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