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Floating Body Induced Transient Characteristics in Polycrystalline Silicon TFTs

Published online by Cambridge University Press:  17 March 2011

Y.Z. Xu ,
F.J. Clough ,
E.M.S. Narayanan  and
R. Cross
Y.Z. Xu
Affiliation:
Emerging Technologies Research Centre, Department of Electrical and Electronic Engineering, De Montfort University, Leicester, LE1 9BH, UKTele.116 - 2506157; Fax.116 - 2506473; E-mail:yxu@dmu.ac.uk.
F.J. Clough
Affiliation:
Emerging Technologies Research Centre, Department of Electrical and Electronic Engineering, De Montfort University, Leicester, LE1 9BH, UK
E.M.S. Narayanan
Affiliation:
Emerging Technologies Research Centre, Department of Electrical and Electronic Engineering, De Montfort University, Leicester, LE1 9BH, UK
R. Cross
Affiliation:
Emerging Technologies Research Centre, Department of Electrical and Electronic Engineering, De Montfort University, Leicester, LE1 9BH, UK
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Abstract

The floating body induced transient characteristics in polycrystalline silicon TFTs is reported. An obvious current surge, arising from the floating body effect, is observed. Using a 2D numerical simulator and comparisons to SIMOX FETs, the insight into the mechanisms governing the experimentally observed switching behavior of poly-Si devices is obtained. It is found that the defect states in poly-Si cause the current surge and exert an effect equivalent to doping in SIMOX FETs.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A28.4
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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