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Flexible monocrystalline Si films for thin film devices from transfer processes

Published online by Cambridge University Press:  15 February 2011

Christopher Berge ,
Thomas A. Wagner ,
Willi Brendle ,
Cecilia Craff-Castillo ,
Markus B. Schubert  and
Jürgen H. Werner
Christopher Berge
Affiliation:
Institute of Physical Electronics, University of Stuttgart, 70569 Stuttgart, Germany
Thomas A. Wagner
Affiliation:
Institute of Physical Electronics, University of Stuttgart, 70569 Stuttgart, Germany
Willi Brendle
Affiliation:
Institute of Physical Electronics, University of Stuttgart, 70569 Stuttgart, Germany
Cecilia Craff-Castillo
Affiliation:
Institute of Physical Electronics, University of Stuttgart, 70569 Stuttgart, Germany
Markus B. Schubert
Affiliation:
Institute of Physical Electronics, University of Stuttgart, 70569 Stuttgart, Germany
Jürgen H. Werner
Affiliation:
Institute of Physical Electronics, University of Stuttgart, 70569 Stuttgart, Germany
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Abstract

Transfer of monocrystalline silicon films to arbitrary foreign substrates is a promising way for the fabrication of high quality silicon films on foreign substrates, demonstrated by solar cell efficiencies on glass as high as 16.6 % in the past. Transfer technologies also enable the use of flexible substrates. This paper investigates the mechanical stability of the separation layer for two different morphologies. First measurements on the minimum bending radius of unsupported silicon films are presented that allow us to estimate minimum curvatures for flexible monocrystalline devices. Finally, we report the first flexible monocrystalline thin film silicon solar cell of 4 cm2 with an independently confirmed efficiency of 14.6 %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H2.7
Copyright
Copyright © Materials Research Society 2003

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