Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-02-06T04:21:29.472Z Has data issue: false hasContentIssue false
  • English
  • Français

First Microscopic Observation of Cadmium-Hydrogen Pairs in GaN

Published online by Cambridge University Press:  10 February 2011

A. Burchard ,
M. Deicher ,
D. Forkel-Wirth ,
E. E. Haller ,
R. Magerle ,
A. Prospero ,
R. Stötzler  and
The Isolde-Collaboration
A. Burchard
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78434 Konstanz, Germany
M. Deicher
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78434 Konstanz, Germany
D. Forkel-Wirth
Affiliation:
CERN / PPE, CH-1211 Geneva 23, Switzerland
E. E. Haller
Affiliation:
University of California, Dept. of Materials Science, Berkeley CA94270, USA
R. Magerle
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78434 Konstanz, Germany
A. Prospero
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78434 Konstanz, Germany
R. Stötzler
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78434 Konstanz, Germany
The Isolde-Collaboration
Affiliation:
CERN / PPE, CH-1211 Geneva 23, Switzerland
Get access

Abstract

The formation and properties of acceptor-hydrogen pairs in GaN have been studied using radioactive 111mCd acceptors and the perturbed γγ angular correlation spectroscopy (PAC). After H-loading by low energy implantation (100 eV) at temperatures between 295 K and 473 K, the formation of two Cd-H complexes involving about 30% of the Cd-acceptors is observed. The complexes have been identified as single hydrogen atoms bound to the Cd acceptor in two different configurations. The dissociation enthalpies of these configurations have been determined as 1.1(1) eV and 1.8(1) eV, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 961
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pankove, J.I. and Johnsons, N.M. (eds.), Hydrogen in Semiconductors, (Semiconductors and Semimetals Vol.34, Academic Press, San Diego, 1991).Google Scholar
2. Pearton, S.J. (ed.), Hydrogen in Compound Semiconductors, (Materials Science Forum Vol. 148–149, Trans Tech Publications, Aedermannsdorf, 1994).Google Scholar
3. Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989).Google Scholar
4. Nakamura, S., Iwasa, N., Senoh, M., and Mukia, T., Jpn. J. Appl. Phys. 31, 1258 (1992).Google Scholar
5. Wichert, Th., Achtziger, N., Metzner, H., and Sielemann, R., in: Hyperfine Interactions of Defects in Semiconductors, ed. Langouche, G. (Elsevier, Amsterdam 1992) p. 77.Google Scholar
6. Burchard, A., Magerle, R. and Deicher, M., to be published.Google Scholar
7. Deicher, M. and Pfeiffer, W., in Ref. 2, p. 481.Google Scholar
8. Brandt, M.S., Ager, J.W. III, Götz, W., Johnson, N.M., Harris, J.S., Molnar, R.J., and Moustakas, T.D., Phys. Rev. B 49, 14758 (1994).Google Scholar
9. Neugebauer, J. and Van de Walle, C.G., Phys. Rev. Lett. 75,4452 (1995).Google Scholar
10. Neugebauer, J. and Van de Walle, C.G., Appl. Phys. Lett. 68, 1829 (1996).Google Scholar
11. Pearton, S.J., Bendi, S., Jones, K.S., Krishnamoorthy, V., Wilson, R.G., Ren, F., Karlicek, R.F. Jr., and Stall, R.A., Appl. Phys. Lett. 69, 1879 (1996).Google Scholar
12. Lee, J.W., Pearton, S.J., Zolper, J.C., and Stall, R.A., Appl. Phys. Lett. 68, 2102 (1996).Google Scholar
13. Zavada, J.M., Wilson, R.G., Abernathy, C.R., and Pearton, S.J., Appl. Phys. Lett. 64, 2724 (1994).Google Scholar