Hostname: page-component-857557d7f7-fn92c Total loading time: 0 Render date: 2025-11-20T14:53:41.916Z Has data issue: false hasContentIssue false
  • English
  • Français

Field emission through diamond/Mo interfaces

Published online by Cambridge University Press:  03 September 2012

W.B. Choi ,
A.F. Myers ,
J.J. Cuomo  and
J.J. Hren
W.B. Choi
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA, wchoi@eos.ncsu.edu
A.F. Myers
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA, wchoi@eos.ncsu.edu
J.J. Cuomo
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA, wchoi@eos.ncsu.edu
J.J. Hren
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA, wchoi@eos.ncsu.edu
Get access

Abstract

The influence of interfacial nanostructure on electron emission from diamond coated Mo emitters is presented. Diamond coating is known to increase electron emissivity, but interfacial oxides and an amorphous layer change the magnitude. After annealing, emissivity was enhanced further and Mo2C was formed at the interface, as well as a decrease in the oxides and amorphous layers. The shape of the FEM image changed but no individual emitting sites were observed. Possible mechanisms causing these changes are discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 339
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Okano, K., Koizumi, S., Ravi, S., Silva, P. and Amaratunga, G.A., Nature 381, 140 (1996).Google Scholar
2 Geis, M.W, Twichell, J.C., and Lyszczarz, T.M., J. Vac. Sci. Technol. B 14 2060 (1996).Google Scholar
3 Choi, W.B., Liu, J., McClure, M.T., Myers, A.F., Cuomo, J.J. and Hren, J.J., J. Vac. Sci. Technol. B14, 2050 (1996).Google Scholar
4 Givargizov, E.I., Zhirnov, V.V., Stepanova, A.N., Rakova, E.V., Kiselev, A.N., and Plekhanov, P.S., Appl. Surf. Sci. 87/88 24 (1995).Google Scholar
5 Van der Weide, J., Zhang, Z., Baumann, P.K., Wensell, M.G., Bernhloc, J., and Nemanich, R. J., Phys. Rev. B 50, 5803 (1994).Google Scholar
6 Huang, Z.H., Cutler, P.H., Miskovsky, N.M., and Sullivan, T.E., Appl. Phys. Lett. 65, 2562 (1994).Google Scholar
7 Xu, N.S., Tzeng, Y., and Latham, R.V., J. Phys. D 26. 1776 (1993).Google Scholar
8 Victor, , de Physique, J., 1996 (accepted for publication)Google Scholar
9 Moaxed, K.L., Zeidler, J.R., and Taylor, M.J., J. Appl. Phys. 68, 2246 (1990).Google Scholar
10 Tachibana, T., Williams, B.E., and Glass, J.T., Phys. Rev. B 45, 11 975 (1992).Google Scholar
11 Gildenblat, G.Sh., Grot, S.A., Hatfield, C.W., Badzian, A.R. and Badzian, T., IEEE Electron Device Lett. 11,371 (1990).Google Scholar
12 Mikhailov, S., Ariosa, D., Weber, J., Baer, Y., Hanni, W., Tang, X.M. and Alers, P., Diamond Relat. Mater., 3, 61 (1993).Google Scholar
13 Choi, W.B., Cuomo, J.J., Zhirnov, V.V., Myers, A.F., and Hren, J.J., Appl. Phys. Lett. 68, 720 (1996).Google Scholar
14 Charbonnier, F., Appl. Surf. Sci. 94/95 26 (1996).Google Scholar
15 Myers, A.F., Ph. D thesis, North Carolina State University, (1996).Google Scholar
16 Choi, W.B., McClure, M.T., Schlesser, R., Sitar, Z. and Hren, J.J., de Physique, J., 1996 (acccepted for publication): The electron energy distribution was analyzed on Mo emitter, after diamond coating, and subsequent annealing. The peak position of the pure Mo was not changed at 4.2eV but diamond coated Mo changed linearly from 4.2eV to 8.5eV. After annealing, the degree of shift reduced and changed non-linearly.Google Scholar
17 Distefano, T.H. and Shatzkes, M., J. Vac. Sci. Technol., 13, 50 (1976).Google Scholar