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Published online by Cambridge University Press: 11 February 2011
Our simulations predict that boron-nitride (BN) doping in carbon nanotubes can greatly improve the field emission properties of these systems. The intrinsic electric field associated with the polarity of the B-N bond enhances the emitted current density through a reduction of the work function at the tip. Using a combination of real-space and plane-wave ab initio methods, we show that this effect is present in both coaxial (BN@C) and linear (BN/C) nanotubular assemblies. While in the coaxial geometry the improvement amounts to a factor of five, the current density is predicted to increase by up to two orders of magnitude in BN/C superlattices.