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Field Effect Transistor Structure Based on Strain Induced Polarization Charges

Published online by Cambridge University Press:  28 February 2011

D.L. Smith ,
R.T. Collins ,
T.F. Kuech  and
C. Mailhiot
D.L. Smith
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
R.T. Collins
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
T.F. Kuech
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
C. Mailhiot
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
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Abstract

We suggest a new field effect transistor based on strain-induced polarization charges. The structure utilizes the pseudomorphic growth of a strained barrier layer on a substrate oriented in a polar direction such as [111] or [211]. Polarization charges in the barrier layer are generated by the piezoelectric effect. A two-dimensional (2-D) electron gas, whose density can be modulated by an external bias, forms at the hetero-interface and it screens the polarization charge. Zero bias densities of several 1011 e/cm2 and threshold voltages of 0.5 V can be achieved. Both normally-on and normally-off structures are possible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 801
Copyright
Copyright © Materials Research Society 1990

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