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Femtosecond Nonlinear Transmission Study of Free-Standing Porous Silicon Films

Published online by Cambridge University Press:  15 February 2011

V. Klimov ,
D. Mcbranch  and
V. Karavanskii
V. Klimov
Affiliation:
Chemical Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545, klimov@lanl.gov
D. Mcbranch
Affiliation:
Chemical Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545, klimov@lanl.gov
V. Karavanskii
Affiliation:
Institute of General Physics, Vavilov str. 38, 117942 Moscow, Russia
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Abstract

Large photo-induced absorption signals were observed in free standing porous silicon films in the spectral range from 1.1 to 2.5 eV using a femtosecond pump and probe technique. The measured nonlinear signal has a very fast component with relaxation constants from 800 fs to tens of picoseconds superimposed on the slow-relaxing thermal background. The spectral structure and relaxation dynamics of the short-lived component of transient absorption show the presence of molecular-like Si complexes with well defined energy levels and spectrally uniform picosecond relaxation dynamics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 179
Copyright
Copyright © Materials Research Society 1996

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