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Feasibility of Simox Material Quality Determination Using Spectroellipsometry: Comparison With Raman And Planar View Transmission Electron Microscopy

Published online by Cambridge University Press:  28 February 2011

G. M. Crean ,
S. Lyncrt ,
R. Greef ,
J. Stoemenos ,
U. Rossow  and
W. Richter
G. M. Crean
Affiliation:
National Microelectronics Research Centre, Prospect Row, Cork, Ireland
S. Lyncrt
Affiliation:
National Microelectronics Research Centre, Prospect Row, Cork, Ireland
R. Greef
Affiliation:
Department of Chemistry, Southampton University, Southampton, U.K.
J. Stoemenos
Affiliation:
Department of Physics, Thessaloniki University, Thessaloniki, Greece
U. Rossow
Affiliation:
Department of Physics, Technical University, Berlin, Germany
W. Richter
Affiliation:
Department of Physics, Technical University, Berlin, Germany
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Abstract

One of the most promising silicon on insulator (SOI) fabrication techniques under development is Separation by IMplanted OXygen (SIMOX) substrates. The objective of this paper is to evaluate the feasability of employing spectroscopic ellipsometry (SE) for the determination of SIMOX substrate quality. Defect density measurements obtained from planar view transmission electron microscopy (TEM) studies are presented and concur with the Raman experimental results. The need for the development of a more sophisticated ellipsometric optical response model to mirror the complexity of the annealed Si overlayer microstructure is demonstrated.

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References

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