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Fast High-Density Low-Pressure Plasma Synthesis of GaN Nanocrystals

Published online by Cambridge University Press:  01 February 2011

Rebecca Joy Anthony ,
Elijah Thimsen ,
Joe Johnson ,
Stephen A Campbell  and
Uwe Kortshagen
Rebecca Joy Anthony
Affiliation:
ranthony@me.umn.edu, University of Minnesota, Mechanical Engineering
Elijah Thimsen
Affiliation:
elijah.thimsen@wustl.edu, University of Minnesota, Mechanical Engineering
Joe Johnson
Affiliation:
joh01714@umn.edu, University of Minnesota, Electrical and Computer Engineering
Stephen A Campbell
Affiliation:
campbell@ece.umn.edu, University of Minnesota, Electrical and Computer Engineering
Uwe Kortshagen
Affiliation:
uk@me.umn.edu, University of Minnesota, Mechanical Engineering, United States
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Abstract

Gallium Nitride is of interest due to its direct bandgap, which allows for efficient emission in the near-UV range. Bulk GaN is already in use in solid-state devices that exploit its emissive properties, however, the promise of GaN nanocrystals as tunable emitters for use in light-emitting devices and lasers has led to the recent exploration of nanocrystalline GaN synthesis routes. Here we discuss the use of nonthermal plasmas for the synthesis of nanocrystalline pow-ders of GaN. The particles were examined using transmission electron microscopy and x-ray photoelectron spectroscopy.

Keywords

GaIII-Vnanostructure

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF11-05
Copyright
Copyright © Materials Research Society 2006

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References

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