Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-02-10T12:59:13.019Z Has data issue: false hasContentIssue false
  • English
  • Français

Fast Degradation with Pulsed Light of a-Si:H P-I-N Photodiodes

Published online by Cambridge University Press:  01 January 1993

J. Puigdollers ,
J. Bertomeu ,
J.M. Asensi ,
J. Andreu  and
J.C. Delgado
J. Puigdollers
Affiliation:
Universitat de Barcelona. Departament de Física Aplicada i Electrònica, Avda Diagonal, 647. 08028 - Barcelona, (SPAIN)
J. Bertomeu
Affiliation:
Universitat de Barcelona. Departament de Física Aplicada i Electrònica, Avda Diagonal, 647. 08028 - Barcelona, (SPAIN)
J.M. Asensi
Affiliation:
Universitat de Barcelona. Departament de Física Aplicada i Electrònica, Avda Diagonal, 647. 08028 - Barcelona, (SPAIN)
J. Andreu
Affiliation:
Universitat de Barcelona. Departament de Física Aplicada i Electrònica, Avda Diagonal, 647. 08028 - Barcelona, (SPAIN)
J.C. Delgado
Affiliation:
Universitat de Barcelona. Departament de Física Aplicada i Electrònica, Avda Diagonal, 647. 08028 - Barcelona, (SPAIN)
Get access

Abstract

Amorphous Silicon p-i-nphotodiodes were obtained by PECVD in a reactor with a rotating substrate holder. Reverse currents as low as 5 × 10−11 A/cm2 at a bias of − 2V were measured using a guard ring electrode to minimize lateral edge currents. The devices were degraded by a Xenon flash lamp in open circuit conditions. The kinetics of the degradation process was evaluated by studying the long time dark current transient under reverse bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 613
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Street, R.A., Appl. Phys. Lett., 57, 1335 (1990).Google Scholar
2. Rossi, M.C., Brandt, M.S. and Stutzmann, M., Appl. Phys. Lett., 60 (14) 1709 (1992).Google Scholar
3. Bertomeu, J., Asensi, J.M., Puigdollers, J., Andreu, J. and Morenza, J.L., Vacuum 44, 129 (1993).Google Scholar
4. Street, R.A. and Hack, M., J. Non-Cryst. Solids 137 & 138, 263 (1991).Google Scholar
5. Street, R.A., Phil. Mag. B. 63, 1343 (1991).Google Scholar
6. Park, H.R., Liu, J.Z. and Wagner, S., Appl. Phys. Lett., 55 (25) 2658 (1989).Google Scholar