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Facile Deposition Processes for Semiconducting Molecular Solids

Published online by Cambridge University Press:  21 March 2011

H.E. Katz ,
W. Li ,
A.J. Lovinger ,
V.R. Raju ,
J.'A. King ,
Y.-Y. Lin ,
A. Dodabalapur ,
Z. Bao  and
J. Rogers
H.E. Katz
Affiliation:
Bell Laboratories-Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974
W. Li
Affiliation:
Bell Laboratories-Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974
A.J. Lovinger
Affiliation:
Bell Laboratories-Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974
V.R. Raju
Affiliation:
Bell Laboratories-Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974
J.'A. King
Affiliation:
Bell Laboratories-Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974
Y.-Y. Lin
Affiliation:
Bell Laboratories-Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974
A. Dodabalapur
Affiliation:
Bell Laboratories-Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974
Z. Bao
Affiliation:
Bell Laboratories-Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974
J. Rogers
Affiliation:
Bell Laboratories-Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

Films of end-substituted dihexyl-α-sexithiophene and –quinquethiophene were cast from solutions in aromatic solvents onto SiO2 and polyimide dielectrics at moderately elevated temperatures and reduced pressure. X-ray diffraction showed perpendicular orientation for most samples, while electron and optical microscopy revealed considerable variations in grain sizes, spacings, and uniformity depending on deposition conditions. For favorable morphologies, thin film transistor (TFT) mobilities were as high as those typically obtained from vacuum-deposited films, in the range of 0.01-0.2 cm2/Vs, with on/off ratios >1000 in accumulation mode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 598: Symposium BB – Electrical, Optical, & Magenetic Properties...V , 1999 , BB9.6
Copyright
Copyright © Materials Research Society 1999

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References

1. Garnier, F., Hajlaoui, R., and Kassmi, M. El, Appl. Phys. Lett. 73, 1721 (1998).Google Scholar
2. a) Garnier, F., Hajlaoui, R., Yassar, A., Srivatsava, P., Science, 265, 684 (1994). b) Z. Bao, Y. Feng, A. Dodabalapur, V. R. Raju, A. J. Lovinger, Chem. Mater., 9, 1299 (1997).Google Scholar
3. Lin, Y-Y., Gundlach, D. J., Nelson, S. F., Jackson, T. N., IEEE Electron Device Lett., 18, 606, 1997.Google Scholar
4. a) Garnier, F., Chem. Phys., 227, 253 (1998). b) H. E. Katz, A. Dodabalapur, Z. Bao, in “Handbook of Oligo-and Polythiophene”, D. Fichou, Ed., in press.Google Scholar
5. Bao, Z., Dodabalapur, A., Lovinger, A. J., Appl. Phys. Lett., 69, 3066 (1996).Google Scholar
6. Haddon, R. C., Perel, A. S., Morris, R. C., Palstra, T. T. M., Hebard, A. F., Fleming, R. M., Appl. Phys. Lett., 67, 121 (1995).Google Scholar
7. Akimichi, H., Waragi, K., Hotta, S., Kano, H., Sakaki, H., Appl. Phys. Lett., 58, 1500 (1991).Google Scholar
8. Dimitrakopoulos, C. D., Afzali-Ardakani, A., Furman, B., Kymissis, J., Purushothaman, S., Synthetic Metals, 89, 193 (1997).Google Scholar
9. Katz, H. E., Laquindanum, J. G., Lovinger, A. J., Chem. Mater., 10, 633 (1998).Google Scholar
10. Garnier, F., Hajlaoui, R., Kassmi, A. El, Horowitz, G., Laigre, L., Porzio, W., Armanini, M., Provasoli, F., Chem. Mater., 10, 3334 (1998).Google Scholar
11. a) Bao, Z., Feng, Y., Dodabalapur, A., Raju, V. R., Lovinger, A. J., Chem. Mater., 9, 1299 (1997). b) H. Sirringhaus, N. Tessler, R. H. Friend, Science, 280, 1741 (1998).Google Scholar
12. Drury, C. J., Mutsaers, C. M. J., Hart, C. M., Matters, M., Leeuw, D. M. de, Appl. Phys. Lett., 73, 108 (1998).Google Scholar
13. a) Garnier, F., Yassar, A., Hajlaoui, R., Horowitz, G., Deloffre, F., Servet, B., Ries, S., Alnot, P., J. Am. Chem. Soc., 15, 8716 (1993).Google Scholar
14. Li, W., Katz, H. E., Lovinger, A. J., Laquindanum, J. G., Chem. Mater., 11, 458 (1999).Google Scholar
15. Laquindanum, J. G., Katz, H. E., Lovinger, A. J., J. Am. Chem. Soc., 120, 664 (1998).Google Scholar
16. Laquindanum, J. G., Katz, H. E., Lovinger, A. J., Dodabalapur, A., Adv. Mater., 9, 36, (1997).Google Scholar
17. a) Alam, M., Dodabalapur, A., Pinto, M., IEEE Trans. Elec. Dev., 44, 1332 (1997). b) A. Dodabalapur, L. Torsi, H. E. Katz, Science, 268, 270 (1995).Google Scholar