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Facetting Growth of Low Temperature Polycrystalline Silicon by Ecr-Cvd with Hydrogen Dilution Method

Published online by Cambridge University Press:  10 February 2011

H.-L. Hsiao ,
A.-B. Yang  and
H.-L. Hwang
H.-L. Hsiao
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30043
A.-B. Yang
Affiliation:
Department of Physics, Tunghai University, Taichung, Taiwan 40704, R.O.C
H.-L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30043
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Abstract

The polycrystalline silicon films with grain size of 1 μ m have been successful deposited on glass substrates using ECR-CVD with hydrogen dilution method at 250°C and without any thermal annealing. The deposited poly-Si films exhibit severe “hill and valley” surface roughness and facets structures. The X-ray diffraction spectra show that the dominant crystal textures are <220> and <111> orientations. The leaf-like two-fold symmetrical grain shape and the corresponding crystallography diffraction pattern indicate the orientation of largest grain is <110>. The dark field TEM image also shows the upside octahedral facets shape. Considering the effect of orientation on deposition rate and symmetry, the possible facets orientation should be <311>. Moreover, the grain sizes of poly-Si thin films deposited on bare Si wafer and on oxidized Si substrates or glass are almost the same. The facetting and textural structures can be attributed to the surface free energy change induced by the adatom quasi-liquid layer which is composed by the radicals and energetic atomic hydrogen. This adatom quasi-liquid layer would dramatically change the surface diffusion processes of adsorbed precursors and surface free energy of low index planes. Therefore, the SiHn radicals and SinHm molecular precursors with enhanced surface mobility would relax to their stable sites and form the crystalline silicon clusters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 963
Copyright
Copyright © Materials Research Society 1998

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References

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