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Facet-control in selective area growth (SAG) of a-plane GaN by MOVPE

Published online by Cambridge University Press:  31 January 2011

Bei Ma ,
Reina Miyagawa ,
Hideto Miyake  and
Kazumasa Hiramatsu
Bei Ma
Affiliation:
mabei@opt.elec.mie-u.ac.jp, Mie University, Tsu, Japan
Reina Miyagawa
Affiliation:
re_miyagawa@opt.elec.mie-u.ac.jp, Mie University, Tsu, Japan
Hideto Miyake
Affiliation:
Miyake@elec.mie-u.ac.jp, Mie University, Tsu, Japan
Kazumasa Hiramatsu
Affiliation:
hiramatu@elec.mie-u.ac.jp, Mie Univerisity, Tsu, Japan
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Abstract

Selective area growth (SAG) of a-plane GaN grown on r-plane sapphire with a stripe orientation along <1-100> was investigated. The key technology of facet-control is optimizing the growth temperature and the reactor pressure. Our experiments reveal that the growth temperature determined facet form: in samples grown at 1000 °C, the structure consists of {11-22}and (000-1); with increasing growth temperature to 1050 °C, the area of {11-22} facet gradually decreases, and two new planes, (0001) and {11-20} facets form; eventually, in samples grown at 1000 oC, the {11-22} facet completely disappears, (0001) and {11-20} facet continue to increase to form a rectangle cross-section. The reactor pressure determines the ratio of the lateral growth rate and the vertical growth rate: with reactor pressure decreasing from 500 torr to 100 torr, the rectangle structure gradually decreases the height and increases the width, and the volume nearly keeps constant.

Keywords

crystal growthIII-Vvapor phase epitaxy (VPE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I05-12
Copyright
Copyright © Materials Research Society 2010

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