Hostname: page-component-7857688df4-4hfp6 Total loading time: 0 Render date: 2025-11-17T00:29:45.084Z Has data issue: false hasContentIssue false
  • English
  • Français

Facet Formation in Submicron Selective Growth of Si/SiGe

Published online by Cambridge University Press:  03 September 2012

K. L. Wang  and
Dawen Wang
K. L. Wang
Affiliation:
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095.
Dawen Wang
Affiliation:
Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095.
Get access

Abstract

The paper reviews the work in mostly Si and SiGe epitaxy and some III-V work on patternedsubstrates. Results of metalorganic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), gas source molecular beam epitaxy (GSMBE), and solid source molecular beam epitaxy (MBE) were discussed in the context of facet formation and mass accumulation. A model was shown to explain the facet formation and its evolution in the process of growth. Further work on surface diffusion and nucleation processes as functions of temperature and other growth parameters will provide needed information for accurate modeling of the facet growth process.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 241
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Pan, X., Allee, D. R., Broers, A. N., Tang, Y. S., and Wilkinson, C. W. D., Appl. Phys. Lett., 59, 3157 1991.Google Scholar
2 Fujita, K., Ohnishi, H., Hirai, M., Shimada, K., and Watanabe, T., Solid-State Electronics, 40, 633 1996.Google Scholar
3 Fukui, T., and Ando, S., Superlattices and Microstructures, 12, 141 1992.Google Scholar
4 Notzel, R., Semicond. Sci. Technol., 11, 1365 1996.Google Scholar
5 Kim, Y., Park, Y. K., Kim, M. S., Kang, J. M., Kim, S. I., Hwang, S. M., and Min, S. K., J. Crystal. Growth, 156, 169 1995.Google Scholar
6 Kushibe, M. and Takaoka, K., J. Crystal Growth, 145, 263 1994.Google Scholar
7 Takeuchi, T., Tsuji, M., Makita, K., and Taguchi, K., in: Proc. 7th Int. Conf. on InP and Related Materials, Sapporo Hokkaido, 1995 p.341.Google Scholar
8 Tsuji, M., Makita, K., Takeuchi, T. Taguchi, K. Crystal, J., Crowth, 162 25, 1996.Google Scholar
9 Vescan, L., in Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates, edited by Eberl, K., Petroff, P. M., and Demeester, P. (Kluwer Academic Publishers, Dordrecht/Boston/London, 1995 pp. 173 Google Scholar
10 Xiang, Qi, Li, Shaozhong, Wang, Dawen Kang Wang, L., Greg Couillard, J., and Graighead, Harold G., J Vac. Sci. Technol., 14, 1 1996.Google Scholar
11 Yoshida, S., Sasaki, M., and Kawanishi, H., Crystal, J., Growth, 136 1994 37.Google Scholar
12 Racanelli, M., and Greve, D. W., Appl. Phys. Lett., 58, 2096 1991.Google Scholar
13 Shen, X.Q., Tanaka, M., Wada, K., and Nishinaga, T., Crystal, J., Growth, 135, 85 1994.Google Scholar
14 Shiraki, Y., Usami, N., Mine, T., Akiyama, N., and Fukatsu, S., in, Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates, edited by Eberl, K., Petroff, P. M. and Demeester, P. Kluwer Academic Publishers, Dordrecht/Boston/London, 1995 pp. 151 Google Scholar
15 Xiang, Qi, Li, Shaozhong, Wang, Dawen, Sakamoto, Kunihiro, Wang, K. L., U’Ren, Greg, and Goorsky, Mark, Crystal, J., Growth, 175, 1997.Google Scholar
16 Madhukar, A., Thin Solid Films, 231, 8 1993.Google Scholar
17 Eisele, I., Baumgartner, H., and Hansch, W., in, low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates, edited by Eberl, K. Petroff, P. M., and Demeester, P., (Kluwer Academic Publishers, Dordrecht/Boston/London, 1995pp. 161.Google Scholar
18 Hobart, K. D., Kub, F. J., Gray, H. F., Twigg, M. E., Park, D., and Thimpson, P. E., Journal of Crystal Growth, 157, 338 1995)Google Scholar
19 Gossner, H., Fehlauer, G., Kiunke, W., Eisele, I., Stolz, M., Hintermaier, M., Knapek, E., Mat. Res. Soc. Symp. Proc., 351, 393 1994.Google Scholar
20 Li, S., Xiang, Q., Wang, Dawen, and Wang, K. L., Crystal, J., Growth, 157, 185 1995).Google Scholar
21 Ohtsuka, M., and Miyazawa, S., J. Appl. Phys., 108, 55 1988.Google Scholar
22 Wegscheider, W., Pfeifer, L., and Wsat, K., Hansch, W., in low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates, edited by Eberl, K., Petroff, P. M., and Demeester, P., (Kluwer Academic Publishers, Dordrecht/Boston/London,1995) pp. 283.Google Scholar