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Fabrication of Si-Ge Compound Nanowires by the FZ Melting Vapor Method

Published online by Cambridge University Press:  11 February 2011

Quanli Hu ,
Hiroshi Araki ,
Hiroshi Suzuki ,
Nobuhiro Ishikawa ,
Wen Yang  and
Tetsuji Noda
Quanli Hu
Affiliation:
National Institute for Materials Science, 1–2–1 Sengen, Tsukuba, Ibaraki 305–0047, Japan
Hiroshi Araki
Affiliation:
National Institute for Materials Science, 1–2–1 Sengen, Tsukuba, Ibaraki 305–0047, Japan
Hiroshi Suzuki
Affiliation:
National Institute for Materials Science, 1–2–1 Sengen, Tsukuba, Ibaraki 305–0047, Japan
Nobuhiro Ishikawa
Affiliation:
National Institute for Materials Science, 1–2–1 Sengen, Tsukuba, Ibaraki 305–0047, Japan
Wen Yang
Affiliation:
National Institute for Materials Science, 1–2–1 Sengen, Tsukuba, Ibaraki 305–0047, Japan
Tetsuji Noda
Affiliation:
National Institute for Materials Science, 1–2–1 Sengen, Tsukuba, Ibaraki 305–0047, Japan
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Abstract

A simple method, floating zone melting vapor, was used for fabricating nanowires of Si-Ge material. Single-crystalline nanowires were successfully synthesized. TEM images of these nanowires indicated that each nanowire consists of an inner single-crystalline core and an outer layer. An observation using high-resolution transmission electron microscopy (HRTEM) showed that almost all nanowires have a similar growth orientation to the crystalline core: [210]. The coexistence of germanium-self-catalyzed and oxide-assisted mechanisms has also been suggested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.31
Copyright
Copyright © Materials Research Society 2003

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References

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