Hostname: page-component-54dcc4c588-2bdfx Total loading time: 0 Render date: 2025-10-02T18:27:35.112Z Has data issue: false hasContentIssue false
  • English
  • Français

The Fabrication of Semiconductor Nanostructure Arrays on a Silicon Substrate Using an Anodized Aluminum Template

Published online by Cambridge University Press:  15 February 2011

S. P. McGinnis ,
J. N. Cleary  and
B. Das
S. P. McGinnis
Affiliation:
Department of Electrical and Computer Engineering, West Virginia University, P.O. Box 6104, Morgantown, WV 26506
J. N. Cleary
Affiliation:
Department of Chemical Engineering, West Virginia University, P.O. Box 6104, Morgantown, WV 26506
B. Das
Affiliation:
Department of Electrical and Computer Engineering, West Virginia University, P.O. Box 6104, Morgantown, WV 26506
Get access

Abstract

We have developed a nanogrowth technology for the fabrication of periodic arrays of semiconductor nanostructures on silicon that is currently being investigated for silicon based x-ray detectors. The semiconductor nanostructures are formed by chemical synthesis in pores of a template created by the anodization of aluminum on a silicon substrate. The use of the silicon substrate allows greater control over the aluminum thin film properties, better in situ monitoring of the pore formation process, and the direct integration of nanostructure arrays with conventional silicon technology.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 299
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Miller, D.A.B., Chemia, D.S., Damen, T.C., Wood, T.H., Burrus, C.A., Gossard, A.C. and Wigemann, W., IEEE J. Quantum Electronics, QE-21, 1462 (1985).Google Scholar
2.Takagahara, T., Surface Science, 267, 310 (1992).Google Scholar
3.Rossmann, H., Schulzgen, A., Henneberger, F. and Muller, M., Phys. Stat. Sol. B 159, 287 (1990).Google Scholar
4.Brus, L., J. Phys. Chem., 90, 2555 (1986).Google Scholar
5.Bras, L. and Peyghambarian, N., OE Reports (1993).Google Scholar
6.Das, B., Banerjee, G. and Miller, A.E., Electronic Materials Conference, Boulder, CO, June 22–24 (1994).Google Scholar
7.McGinnis, S.P. and Das, B., IEEE Cornell Conference, Ithaca, NY, August (1995).Google Scholar
8.Keller, F., Hunter, M.S., and Robinson, D.L., J. Electrochem. Soc, 100, 411 (1953).Google Scholar
9.AlMawlawi, D., Coombs, N. and Moskovits, M., J. Appl. Phys., 70, 4421 (1991).Google Scholar
10.AlMawlawi, D., Liu, C.Z. and Moskovits, M., J. Matter. Res., 9, 1014 (1994).Google Scholar
11.Antonuk, L.E., Photonics Spectra, June, 108 (1995).Google Scholar
12.Bhargava, R.N., Gallagher, D., Hong, X., and Nurmikko, A., Phys. Rev. Lett., 72, 416 (1994).Google Scholar
13.Fenyves, E. and Haiman, O., The Physical Principles of Nuclear Radiation Measurements, (Academic Press, New York, 1969), p. 144.Google Scholar