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Extraction of Trap Characteristics from Excess Noise in GaN Devices

Published online by Cambridge University Press:  21 March 2011

Alexander A. Balandin
Alexander A. Balandin*
Affiliation:
Department of Electrical Engineering University of California at Riverside Riverside, California 92521, U.S.A.
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Abstract

Characteristics of traps are extracted from excess noise spectra of the doped-and undoped-channel GaN/AlGaN heterostructure field-effect transistors. The two types of excess noise that have been analyzed include flicker, e.g. 1/fγ noise, and generation-recombination noise. The average trap density determined for the undoped and doped devices is 1.1 × 1016 cm−3 and 7.1 × 1017 cm−3, respectively. Two distinct trap time constants τ determined for doped devices were 16 μsec and 0.1 msec. The trap characteristics obtained from the analysis of the excess noise spectra are in agreement with data provided by other techniques.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E5.3
Copyright
Copyright © Materials Research Society 2001

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References

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