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Experimental and Theoretical Analysis of the above Threshold Characteristics of Amorphous Silicon Alloy Field Effect Transistors

Published online by Cambridge University Press:  28 February 2011

M. Hack ,
M. Shur ,
C. Hyun ,
Z. Yaniv ,
V. Cannella  and
M. Yang
M. Hack
Affiliation:
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
M. Shur
Affiliation:
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
C. Hyun
Affiliation:
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
Z. Yaniv
Affiliation:
Ovonic Display Systems, Inc., 1896 Barrett Street, Troy, Michigan 48084
V. Cannella
Affiliation:
Ovonic Display Systems, Inc., 1896 Barrett Street, Troy, Michigan 48084
M. Yang
Affiliation:
Ovonic Display Systems, Inc., 1896 Barrett Street, Troy, Michigan 48084
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Abstract

Experimental studies on the above threshold characteristics of amorphous silicon alloy thin films transistors show that the field-effect mobility has a weak temperature dependence and that the current-voltage characteristics are described by a power law dependence on gate voltage, with an exponent greater than two. These results are in good agreement with our theoretical model, which demonstrates that in the above threshold regime, the Fermi level at the semiconductor-insulator interface lies in the tail states which control device performance. Analysis of the above threshold characteristics shows the characteristic energy variation of the exponential tail state distribution to be ∼22meV and that the on current changes by a factor of only two over the temperature range lO−90°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 373
Copyright
Copyright © Materials Research Society 1985

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References

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