Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-01-28T23:54:50.212Z Has data issue: false hasContentIssue false
  • English
  • Français

Exotic Doping for Zno Thin Films: Possibility of Monolithic Optical Integrated Circuit

Published online by Cambridge University Press:  10 February 2011

Norifumi Fujimura ,
Tamaki Shimura ,
Toshifumi Wakano ,
Atsushi Ashida  and
Taichiro Ito
Norifumi Fujimura
Affiliation:
College of Eng., Dept. of Applied Materials Science, Osaka Prefecture University, [1] Gakuen-cho, Sakai Osaka 599–8531, Japanfujim@ams.osakafu-u.ac.jp
Tamaki Shimura
Affiliation:
College of Eng., Dept. of Applied Materials Science, Osaka Prefecture University, [1] Gakuen-cho, Sakai Osaka 599–8531, Japanfujim@ams.osakafu-u.ac.jp
Toshifumi Wakano
Affiliation:
College of Eng., Dept. of Applied Materials Science, Osaka Prefecture University, [1] Gakuen-cho, Sakai Osaka 599–8531, Japanfujim@ams.osakafu-u.ac.jp
Atsushi Ashida
Affiliation:
College of Eng., Dept. of Applied Materials Science, Osaka Prefecture University, [1] Gakuen-cho, Sakai Osaka 599–8531, Japanfujim@ams.osakafu-u.ac.jp
Taichiro Ito
Affiliation:
College of Eng., Dept. of Applied Materials Science, Osaka Prefecture University, [1] Gakuen-cho, Sakai Osaka 599–8531, Japanfujim@ams.osakafu-u.ac.jp
Get access

Abstract

We propose the application of ZnO:X (X = Li, Mg, N, In, Al, Mn, Gd, Yb etc.) films for a monolithic Optical Integrated Circuit (OIC). Since ZnO exhibits excellent piezoelectric effect and has also electro-optic and nonlinear optic effects and the thin films are easily obtained, it has been studied as one of the important thin film wave guide materials especially for an acoustooptic device[1]. In terms of electro-optic and nonlinear optic effects, however, LiNbO3 or LiTaO3 is superior to ZnO. The most important issue of thin film waveguide using such ferroelectrics is optical losses at the film/substrate interface and the film surface, because the process window to control the surface morphology is very narrow due to their high deposition temperature. Since ZnO can be grown at extremely low temperature, the roughness at the surface and the interface is expected to be minimized. This is the absolute requirement especially for waveguide using a blue or ultraviolet laser. Recently, lasing at the wavelength of ultraviolet, ferroelectric and antiferromagnetic behaviors of ZnO doped with various exotic elements (exotic doping) have been reported. This paper discusses the OIC application of ZnO thin films doped with exotic elements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999 , 317
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Chubachi, N., Proc. IEEE, 64 (1976) 772 10.1109/PROC.1976.10210Google Scholar
[2] Fork, D.K., Armani-Leplingard, F. and Kigston, J.J., MRS proc. Vol.361 (1995) 155 10.1557/PROC-361-155Google Scholar
[3] for example Zang, D.Y. and Tsai, C.S., Applied Optics, 25 (1986) 2264.10.1364/AO.25.002264Google Scholar
[4] for example Wasa, K., Yamazaki, O., Adachi, H., Kawaguchi, T., and Setsune, K., J. Lightwave Thee. LT-2 (1984) 710 10.1109/JLT.1984.1073666Google Scholar
[5] Nashimoto, K., Ceramic Transactions 43 (1994) 107 Google Scholar
[6] Fujimura, N., Nishihara, T., Goto, S. and Ito, T., J. crystal growth. 33 (1994) 5172 Google Scholar
[7] Klingshim, C., Phys. Status Solidi B, 71 (1975) 547 10.1002/pssb.2220710216Google Scholar
[8] Bagall, D.M., Chen, Y.F., Zhu, Z., Yao, T., Koyama, S., Shen, M.Y., and Goto, T., Appl. Phys. Lett. 70 (1997) 2230 10.1063/1.118824Google Scholar
[9] Tang, Z.K., Wong, G.K., Yu, P., Kawasaki, M., Ohtomo, A., Koinuma, H., Segawa, Y., Appl. Phys. Lett. 72 (1998) 3270 10.1063/1.121620Google Scholar
[10] Onodera, A., Tamaki, N., Kawamura, Y., Sawada, T. and Yamashita, H., Jpn. J. Appl. Phys. 35 (1996) 5156 10.1143/JJAP.35.5160Google Scholar
[11] Onodera, A., Tamaki, N., Jin, K. and Yamashita, H., Jpn.J. Appl. Phys. 36 (1997) 6008 10.1143/JJAP.36.6008Google Scholar
[12] Onodera, A., Yoshio, K., Sato, H., Yamashita, H. and Sakaguchi, N. Jpn. J. Appl. Phys. 37 (1998) 5315 10.1143/JJAP.37.5315Google Scholar
[13] For example, Mitsuya, T., Wasa, K., J. Appl. Phys. 51 2464 (1980)10.1063/1.328019Google Scholar
[14] Joscph, M., Tabata, H. and Kawai, T., Appl. Phys. Lett., April/25 (1999)Google Scholar
[15] Fujimura, N., Shimura, T., Yoshimura, T. and Ito, T., submitted to Appl. Phys. LettGoogle Scholar
[16] Yamamoto, T., Yoshida, H.K., Jpn J. of Applied Physics, 38 (1999)1,166Google Scholar