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Excitonic Diamagnetic Shifts and Magnetic Field Dependent Linewidths in AlxGa1-xAs Alloys

Published online by Cambridge University Press:  21 March 2011

G. Coli ,
K. K. Bajaj ,
J. L. Reno  and
E. D. Jones
G. Coli
Affiliation:
Physics Department, Emory University, Atlanta, Georgia 30322
K. K. Bajaj
Affiliation:
Physics Department, Emory University, Atlanta, Georgia 30322
J. L. Reno
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
E. D. Jones
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
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Abstract

We report measurements of both the diamagnetic shifts and the linewidths of excitonic transitions in AlxGa1-xAs alloys as a function of Al concentration and magnetic field at 1.4 K using photoluminescence spectroscopy. The magnetic field was varied from 0 to 13 tesla and Al composition in our samples ranged from 0 to 30%. The samples were grown on GaAs substrates oriented along [001] direction using molecular beam epitaxy at 590°C. We find that for a given value of alloy composition, both the diamagnetic shift and excitonic linewidth increase as a function of magnetic field. To explain our experimental data we propose that the excitons are localized in a very specific manner. To simulate this localization, we assume that the exciton reduced mass is effectively increased and is obtained by using the alloy dependent heavy-hole mass along (001) direction treated isotropically. The calculated values of the variations of the diamagnetic shift and excitonic linewidth as a function of magnetic field obtained using this model agree very well with those reported here.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H7.4.1
Copyright
Copyright © Materials Research Society 2002

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