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Evidence of Quantum Size Effects in a-Si:H/a-Si1−xCx:H Superlattices

Published online by Cambridge University Press:  26 February 2011

C. E. Nebel ,
F. Kessler ,
G. Bilger ,
G. H. Bauer ,
Y. L. Jiang ,
H. L. Hwang ,
K. C. Hsu  and
C. S. Hong
C. E. Nebel
Affiliation:
Inst. f. Phys. Elektronik, Univers. Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart-80, F.R.G.
F. Kessler
Affiliation:
Inst. f. Phys. Elektronik, Univers. Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart-80, F.R.G.
G. Bilger
Affiliation:
Inst. f. Phys. Elektronik, Univers. Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart-80, F.R.G.
G. H. Bauer
Affiliation:
Inst. f. Phys. Elektronik, Univers. Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart-80, F.R.G.
Y. L. Jiang
Affiliation:
Dep. of El. Engin., Nat. Tsing Hua Univers., Hsin-Chu, Taiwan, R.O. China.
H. L. Hwang
Affiliation:
Dep. of El. Engin., Nat. Tsing Hua Univers., Hsin-Chu, Taiwan, R.O. China.
K. C. Hsu
Affiliation:
Mat. Res. Lab., Indust. Techn. Res. Inst., Hsin-Chu, Taiwan, R.O. China.
C. S. Hong
Affiliation:
Mat. Res. Lab., Indust. Techn. Res. Inst., Hsin-Chu, Taiwan, R.O. China.
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Abstract

a-Si1−xCx:H superlattice structures were fabricated by photo-CVD and glow discharge deposition. The compositional abruptness of the heterojunction has been confirmed by X-ray diffraction and Auger electron spectroscopy. The optical bandgap of amorphous silicon-based superlattices increases as the well layer thickness decreases. The existence of quantized levels in a-Si:H wells is demonstrated by the observation of resonant tunneling current through the three-barrier two-well structure.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 361
Copyright
Copyright © Materials Research Society 1988

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References

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