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Evidence for Electronic Energy Loss Processes Stimulating Solid Phase Epitaxial Regrowth of Spatially Isolated Amorphous Regions in Semiconductor Systems

Published online by Cambridge University Press:  16 February 2011

I. Jencic ,
M. W. Bench ,
I. M. Robertson  and
M. A. Kirk
I. Jencic
Affiliation:
Dept. of Materials Science and Engineering, University of Illinois, 1304 W. Green St., Urbana IL 61801
M. W. Bench
Affiliation:
Dept. of Materials Science, University of Minnesota, Minneapolis, MN 55455
I. M. Robertson
Affiliation:
Dept. of Materials Science and Engineering, University of Illinois, 1304 W. Green St., Urbana IL 61801
M. A. Kirk
Affiliation:
Argonne National Laboratory, Argonne IL 60439
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Abstract

Solid phase epitaxial regrowth of spatially isolated amorphous regions in Si, Ge and GaP has been stimulated by using an electron beam with energies in the range of 50 to 300 keV. In all materials, the rate at which the amorphous zones disappear decreases as the energy of the electron beam increases from 50 keV reaching a minimum below the threshold displacement voltage before it again increases with increasing electron energy. The experimental results are interpreted in terms of creation and motion of defects (dangling bonds, charged defects) along the amorphouscrystalline interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 481
Copyright
Copyright © Materials Research Society 1995

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References

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