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Evaluation of the Interface Structure During Stranski-Krastanov Growth of GE(SI) on Si (001)

Published online by Cambridge University Press:  25 February 2011

M. Albrecht ,
H. P. Strunk ,
P. O. Hansson  and
E. Bauser
M. Albrecht
Affiliation:
Universiẗt Erlangen, Institut fur Werkstoffwissenschaften VII, Haberstraβe 2, DW-8520 Erlangen, Federal Republic of, Germany
H. P. Strunk
Affiliation:
Universiẗt Erlangen, Institut fur Werkstoffwissenschaften VII, Haberstraβe 2, DW-8520 Erlangen, Federal Republic of, Germany
P. O. Hansson
Affiliation:
Max-Planck-Institut fur Festkörperforschung, HeisenbergstraBe 1, DW-7000 Stuttgart 80, Federal Republic of, Germany
E. Bauser
Affiliation:
Max-Planck-Institut fur Festkörperforschung, HeisenbergstraBe 1, DW-7000 Stuttgart 80, Federal Republic of, Germany
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Abstract

The initial stages of heteroepitaxial growth of Ge0.85 Si0.15 on Si(001) grown from Bi solution (liquid phase epitaxy) are studid by transmission electron microscopy. Stranski-Krastanov growth is observed to take place. After growth of a pseudomorphic Ge0.85 Si0.15 layer of 4 monolayer thickness, islands form and grow pseudomorphically up to a thickness of 30 nm. Then first misfit dislocations form. The formation process of these dislocations is analyzed and discussed in terms of half loop nucleation at the surface and dislocation glide. Evidence for glide on (110) planes is put forward.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 79
Copyright
Copyright © Materials Research Society 1992

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