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Evaluation of Microdefects in As-Grown Silicon Crystals

Published online by Cambridge University Press:  03 September 2012

H. Takeno ,
S. Ushio  and
T. Takenaka
H. Takeno
Affiliation:
SEH Isobe R&D Center, Shin-Etsu Handotai Co., Ltd., 2–13–1 Isobe, Annaka-shi, Gunma 37 9–01, Japan
S. Ushio
Affiliation:
SEH Isobe R&D Center, Shin-Etsu Handotai Co., Ltd., 2–13–1 Isobe, Annaka-shi, Gunma 37 9–01, Japan
T. Takenaka
Affiliation:
SEH Isobe R&D Center, Shin-Etsu Handotai Co., Ltd., 2–13–1 Isobe, Annaka-shi, Gunma 37 9–01, Japan
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Abstract

Microdefects, revealed as ‘flow patterns’ by preferential etching using Secco's etchant, in as-grown silicon crystals have been investigated by means of a transmission electron microscopy and a preferential etching. In as-grown CZ crystals, grown at the pulling speeds of 0.4 or 1.4 mm/min, dislocation loops and clusters were observed with TEM. The dislocation loops in both crystals are interstitial type. From a thermal behavior of flow patterns by heat treatments, we confirmed that the defects revealed as flow patterns in CZ crystals do not have a similar nature of that in D-defect region of FZ crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 51
Copyright
Copyright © Materials Research Society 1992

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References

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