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Evaluation of Anti-Phase-Boundaries in GaAs/Si Heterostructures by Transmission Electron Microscopy

Published online by Cambridge University Press:  25 February 2011

O. Ueda ,
T. Soga ,
T. Jimbo  and
M. Umeno
O. Ueda
Affiliation:
Eujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
T. Soga
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Jimbo
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
M. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

The nature and behavior of anti-phase-boundaries in GaAs/Si heterostructures using GaP, GaP/GaAsP and GaAsP/GaAs strained layer superlattices as intermediate buffer layers, have been investigated by transmission electron microscopy. It has been found that anti-phasedomains are very complicated three dimensional polygons consisting of several sub-boundaries in different orientations. Self-annihilation of anti-phase-domains during crystal growth of GaAs on (001)just or (001)2°off Si substrates is directly observed for the first time through planview and cross-sectional observations. Based on these findings, a mechanism of annihilation of these domains is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 267
Copyright
Copyright © Materials Research Society 1989

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