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Etching Properties of Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

Y. S. Tsuo ,
Y. Xu ,
D. W. Baker  and
S.K Deb
Y. S. Tsuo
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401–3393
Y. Xu
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401–3393
D. W. Baker
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401–3393
S.K Deb
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401–3393
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Abstract

We have studied wet-chemical and dry etching properties of doped and undoped hydrogenated amorphous silicon (a-Si:H) films with bonded hydrogen content varying from 0 to 20 at.%. Etching processes studied include (1) wet-chemical etching using solutions of KOH, isopropyl alcohol (IPA), and H2O, (2) hydrogen plasma etching, and (3) XeF2 vapor etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 805
Copyright
Copyright © Materials Research Society 1991

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References

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